Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications release_yqx3vgpntnejrfiviuqx7x6csi

by Arne Benjamin Renz, Fan Li, Oliver Vavasour, Peter Gammon, Tianxiang Dai, Guy William Clarke Baker, Francesco La Via, Marcin Zielinski, Luyang Zhang, Nicholas Grant, John Murphy, Philip A Mawby (+2 others)

Published in Semiconductor Science and Technology by IOP Publishing.


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