Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs release_xj3x2ntemfceriixrvh4uvh35q

by Guofu Niu, Hua Yang, M. Varadharajaperumal, Yun Shi, J.D. Cressler, R. Krithivasan, P.W. Marshall, R. Reed

Published in IEEE Transactions on Nuclear Science by Institute of Electrical and Electronics Engineers (IEEE).

2005   Volume 52, p2153-2157

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