Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs

by Guofu Niu, Hua Yang, M. Varadharajaperumal, Yun Shi, J.D. Cressler, R. Krithivasan, P.W. Marshall, R. Reed

Published in IEEE Transactions on Nuclear Science by Institute of Electrical and Electronics Engineers (IEEE).

2005 Volume 52, p2153-2157

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Year 2005

DOI 10.1109/tns.2005.860744

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Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs release_xj3x2ntemfceriixrvh4uvh35q