Direct Band Gap Semiconducting Holey Graphyne: Structure, Synthesis and Potential Applications release_xay335kdofcftgmol7hupta4me

by Xinghui Liu1, Soo Min Cho, Shiru Lin, Eunbhin Yun, Eun Hee Baek, Zhongfang Chen, Do Hyun Ryu, Hyoyoung Lee

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Here we report two-dimensional (2D) single-crystalline holey-graphyne (HGY) created an interfacial two-solvent system through a Castro-Stephens coupling reaction from 1,3,5-tribromo-2,4,6-triethynylbenzene. HGY is a new type of 2D carbon allotrope whose structure is comprised of a pattern of six-vertex and eight-vertex rings. The carbon-carbon 2D network of HGY is alternately linked between benzene rings and sp (carbon-carbon triple bond) bonding. The ratio of the sp over sp2 bonding is 50%. It is confirmed that HGY is stable by DFT calculation. The vibrational, optic, and electric properties of HGY are investigated theoretically and experimentally. It is a p-type semiconductor that embraces a natural direct band gap (~ 1.0 eV) with high hole mobility and electron mobility at room temperature. This report is expected to help develop a new types of carbon-based semiconductor devices with high mobility.
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Type  article
Stage   submitted
Date   2019-07-08
Version   v1
Language   en ?
arXiv  1907.03534v1
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