H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs release_rev_b1c3c055-0369-4297-a0fe-59e93d91289a

by Tae In Lee, Manh-Cuong Nguyen, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Wan Sik Hwang, Hyun-Young Yu, Rino Choi, Byung Jin Cho

Published in IEEE Electron Device Letters by Institute of Electrical and Electronics Engineers (IEEE).

2019   p1-1

Type  article-journal
Stage   published
Year   2019
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ISSN-L:  0741-3106
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