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H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs
release_rev_b1c3c055-0369-4297-a0fe-59e93d91289a
by
Tae In Lee, Manh-Cuong Nguyen, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Wan Sik Hwang, Hyun-Young Yu, Rino Choi, Byung Jin Cho
Published
in IEEE Electron Device Letters by Institute of Electrical and Electronics Engineers (IEEE).
2019 p1-1
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Year 2019
article-journal
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published
Year 2019
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