Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications release_rev_4d1d2bab-c315-418a-9da8-54c899b073f3

by Arne Benjamin Renz, Fan Li, Oliver Vavasour, Peter Gammon, Tianxiang Dai, Guy William Clarke Baker, Francesco La Via, Marcin Zielinski, Luyang Zhang, Nicholas Grant, John Murphy, Philip A Mawby (+2 others)

Published in Semiconductor Science and Technology by IOP Publishing.


Type  article-journal
Stage   published
Date   2021-03-17
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ISSN-L:  0268-1242
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Revision: 4d1d2bab-c315-418a-9da8-54c899b073f3