Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

by Arne Benjamin Renz, Fan Li, Oliver Vavasour, Peter Gammon, Tianxiang Dai, Guy William Clarke Baker, Francesco La Via, Marcin Zielinski, Luyang Zhang, Nicholas Grant, John Murphy, Philip A Mawby (+2 others)

Published in Semiconductor Science and Technology by IOP Publishing.

2021

Type article-journal
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published

Date 2021-03-17

DOI 10.1088/1361-6641/abefa1

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ISSN-L: 0268-1242

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Revision: 4d1d2bab-c315-418a-9da8-54c899b073f3
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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications release_rev_4d1d2bab-c315-418a-9da8-54c899b073f3

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications `release_rev_4d1d2bab-c315-418a-9da8-54c899b073f3`