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Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs with Improved Subthreshold Characteristics and Device Reliability
release_prv6mo66gjaylfigl2bf673sfu
by
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang
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in IEEE Journal of the Electron Devices Society by Institute of Electrical and Electronics Engineers (IEEE).
2022 p1-1
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