Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs with Improved Subthreshold Characteristics and Device Reliability release_prv6mo66gjaylfigl2bf673sfu

by Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang

Published in IEEE Journal of the Electron Devices Society by Institute of Electrical and Electronics Engineers (IEEE).

2022   p1-1

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