Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor release_pmfes4wperb4vdhzkjwd5s47fu

by Yifei Wang, Xiaoping Zou, Jialin Zhu, Chunqian Zhang, Jin Cheng, Junqi Wang, Xiaolan Wang, Xiaotong Li, Keke Song, Baokai Ren, Junming Li

Published in Coatings by MDPI AG.

2021   Volume 11, p1099

Abstract

With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.
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Date   2021-09-12
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