Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN release_pkdddoiiafcq7jfw22o6b6zobm

by Arpan Chakraborty, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, Umesh K. Mishra

Published in Applied Physics Letters by AIP Publishing.

2005   Volume 86, p031901

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