Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate release_obtgoqnnjffr7khbbpqgghbfgu

by T. Yang, Y. Liu, P. D. Ye, Y. Xuan, H. Pal, M. S. Lundstrom

Published in Applied Physics Letters by AIP Publishing.

2008   Volume 92, Issue 25, p252105

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