Recent progress in red light-emitting diodes by III-nitride materials release_n4k2lc46czekre3sd2l3zkmurm

by Daisuke Iida, Kazuhiro Ohkawa

Published in Semiconductor Science and Technology by IOP Publishing.



<jats:title>Abstract</jats:title> GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation RGB displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes (LDs). Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.
In application/xml+jats format

Archived Files and Locations

application/pdf  3.3 MB
file_bt2ggui5xvb63hsldgm5zmobhi (web) (webarchive)
Read Archived PDF
Preserved and Accessible
Type  article-journal
Stage   published
Date   2021-11-12
Container Metadata
Not in DOAJ
In Keepers Registry
ISSN-L:  0268-1242
Work Entity
access all versions, variants, and formats of this works (eg, pre-prints)
Catalog Record
Revision: 976b4aa2-3638-4163-b3ea-fa405c80c6fb