ISSN-L | 1226-9026 |
Volume | 18 |
Page(s) | 364-370 |
Release Date | 2014-08-30 |
Container Type | journal |
Publisher | The Korea Navigation Institute |
Primary Language | en
(lookup)
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A New Manufacturing Technology and Characteristics of Trench Gate MOSFET
새로운 트렌치 게이트 MOSFET 제조 공정기술 및 특성
release_ixjfqriblndttg4xqxweyynxaa
by
Jong-Mu Baek, Moon-Taek Cho, Seung-Kwon Na
Published
in The Journal of Advanced Navigation Technology
by The Korea Navigation Institute
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application/pdf 881.3 kB
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www.ndsl.kr (web) web.archive.org (webarchive) |
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Date 2014-08-30
article-journal
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published
Date 2014-08-30
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Open Access Publication
Not in DOAJ
In ISSN ROAD
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ISSN-L:
1226-9026
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grouping other versions (eg, pre-print) and variants of this release
grouping other versions (eg, pre-print) and variants of this release
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Worldcat
SHERPA/RoMEO (journal policies)
wikidata.org
CORE.ac.uk
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