Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering release_ilmbthcffzd27hkzoo4snl5zsa

by R. K. Choudhary, P. Mishra, A. Biswas, A. C. Bidaye

Published in ISRN Materials Science by Hindawi Limited.

2013   Volume 2013, p1-5

Abstract

Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6–8 nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0–5.48 eV and 1.58–1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film.
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