21pXA-9 SiO_2/Si(100) 界面近傍における余剰 Si 点欠陥の安定性
Stability of excess Si defects near SiO_2/Si(100) interfaces release_dp622lfq5jaidiqwxrg2vnnqkq

by H. Kageshima, T. Akiyama, K. Akagi, M. Uematsu, K. Shiraishi, S. Tsuneyuki

Published in Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu) by The Physical Society of Japan.

2003   Volume 58.2.4, Issue 0, p857

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