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21pXA-9 SiO_2/Si(100) 界面近傍における余剰 Si 点欠陥の安定性
Stability of excess Si defects near SiO_2/Si(100) interfaces
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by
H. Kageshima, T. Akiyama, K. Akagi, M. Uematsu, K. Shiraishi, S. Tsuneyuki
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in Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu) by The Physical Society of Japan.
2003 Volume 58.2.4, Issue 0, p857
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