A 170nW CMOS wake-up receiver with −60 dBm sensitivity using AlN high-Q piezoelectric resonators

Scott T. Block; Xiaonan Jiang; Brad Harris; Can Cui; Jeronimo Segovia Fernandez; Rajeevan Amirtharajah; David A. Horsley; Hooman Rashtian; Xiaoguang Leo Liu

doi:10.1109/iscas.2017.8050447

by Scott T. Block, Xiaonan Jiang, Brad Harris, Can Cui, Jeronimo Segovia Fernandez, Rajeevan Amirtharajah, David A. Horsley, Hooman Rashtian, Xiaoguang Leo Liu

Published in IEEE International Symposium on Circuits and Systems proceedings by IEEE.

2017 p1-4

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DOI 10.1109/iscas.2017.8050447
dblp conf/iscas/BlockJHCFAHRL17

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A 170nW CMOS wake-up receiver with −60 dBm sensitivity using AlN high-Q piezoelectric resonators release_brmbwi2jlfbutbxdw7dzxkzvnm

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