Variability Analysis of Graded Channel Dual Material-double Gate Strained-silicon MOSFET With fixed Charges release_bqguyrejzbdhtn4gd2evzmxbge

by Subba Rao Suddapalli, Bheema Rao Nistala

Released as a post by Research Square Platform LLC.

2021  

Abstract

<jats:title>Abstract</jats:title> In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. The results confirm that the effect of process variations is severe when the device has fixed charges at oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET has less vulnerable to the effects of line edge roughness, fluctuations in oxide thickness and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET.
In application/xml+jats format

Archived Files and Locations

application/pdf  1.4 MB
file_ij5kec6oe5cdfhcivyhj4bzgve
assets.researchsquare.com (publisher)
web.archive.org (webarchive)
Read Archived PDF
Preserved and Accessible
Type  post
Stage   unknown
Date   2021-04-16
Work Entity
access all versions, variants, and formats of this works (eg, pre-prints)
Catalog Record
Revision: dd743e25-431b-4f67-aba4-a7b5dfe5a07a
API URL: JSON