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Piezoresistive effects of resonant tunneling structure for application in micro-sensors
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Wendong Zhang¹, Chenyang Xue¹, Jijun Xiong¹, Bin Xie¹, Tianjie Wei¹, Yong Chen²
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2007 Volume 45
Abstract
In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant tunneling structures have also been designed and fabricated by control hole technique.
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