A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages
A FinFET SRAM CELL DESIGN WITH BTI ROBUSTNESS AND HIGH YIELD release_6njhvoonbrabfjg5ayatmvd6uy

by Behzad Ebrahimi, Reza Asadpour, Ali Afzali-Kusha, Massoud Pedram

Published in International journal of circuit theory and applications by Wiley.

2015   Volume 43, Issue 12, p2011-2024

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