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A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages
A FinFET SRAM CELL DESIGN WITH BTI ROBUSTNESS AND HIGH YIELD
release_6njhvoonbrabfjg5ayatmvd6uy
by
Behzad Ebrahimi, Reza Asadpour, Ali Afzali-Kusha, Massoud Pedram
Published
in International journal of circuit theory and applications by Wiley.
2015 Volume 43, Issue 12, p2011-2024
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10.1002/cta.2057
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Worldcat
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CORE.ac.uk
Semantic Scholar
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