Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band release_6igaasrjrfbctg6idol2ikchsi

by Shengqiang Xu, Kaizhen Han, Yi-Chiau Huang, Kwang Hong Lee, Yuye Kang, Saeid Masudy-Panah, Ying Wu, Dian Lei, Yunshan Zhao, Hong Wang, Chuan Seng Tan, Xiao Gong (+1 others)

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ident 6igaasrjrfbctg6idol2ikchsi
issue 19
language en
pages 26924
publisher The Optical Society
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release_date 2019-09-11
release_stage published
release_type article-journal
release_year 2019
revision 2004f98d-40dc-47c8-99d8-58d4f3db2699
state active
title Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
volume 27
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