Signatures of two-level defects in the temperature-dependent damping of
nanomechanical silicon nitride resonators
release_65cfuucah5apzknfil55dq7kpe
by
Thomas Faust, Johannes Rieger, Maximilian J. Seitner, Jörg P.
Kotthaus, Eva M. Weig
2013
Abstract
The damping rates of high quality factor nanomechanical resonators are well
beyond intrinsic limits. Here, we explore the underlying microscopic loss
mechanisms by investigating the temperature-dependent damping of the
fundamental and third harmonic transverse flexural mode of a doubly clamped
silicon nitride string. It exhibits characteristic maxima reminiscent of
two-level defects typical for amorphous materials. Coupling to those defects
relaxes the momentum selection rules, allowing energy transfer from discrete
long wavelength resonator modes to the high frequency phonon environment.
In text/plain
format
Archived Files and Locations
application/pdf 371.6 kB
file_ws32tr34hfd77ob5xfk4cypyue
|
arxiv.org (repository) web.archive.org (webarchive) |
1310.3671v1
access all versions, variants, and formats of this works (eg, pre-prints)