Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators release_65cfuucah5apzknfil55dq7kpe

by Thomas Faust, Johannes Rieger, Maximilian J. Seitner, Jörg P. Kotthaus, Eva M. Weig

Released as a article .

2013  

Abstract

The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long wavelength resonator modes to the high frequency phonon environment.
In text/plain format

Archived Files and Locations

application/pdf  371.6 kB
file_ws32tr34hfd77ob5xfk4cypyue
arxiv.org (repository)
web.archive.org (webarchive)
Read Archived PDF
Preserved and Accessible
Type  article
Stage   submitted
Date   2013-10-14
Version   v1
Language   en ?
arXiv  1310.3671v1
Work Entity
access all versions, variants, and formats of this works (eg, pre-prints)
Catalog Record
Revision: 4de082c7-7636-48c7-b229-2d264c422412
API URL: JSON