20 kV, 2 cm<sup>2</sup>, 4H-SiC gate turn-off thyristors for advanced pulsed power applications release_4joklshgzneyvhqbfkbm6g6vbe

by L. Cheng, A. K. Agarwal, C. Capell, M. O'Loughlin, K. Lam, J. Richmond, Edward Van Brunt, A. Burk, J. W. Palmour, H. O'Brien, A. Ogunniyi, C. Scozzie

Released as a paper-conference by IEEE.

(2013)

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