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Associated Releases

2021-03-17 Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications
published | article-journal
doi:10.1088/1361-6641/abefa1

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SHA-256 95436104e3e89df502c49f0c1a5c17f00926e3ec203b21b5cd241e622ad0e027
MD5 6848a4084f3c4667c53a7fca65dad8f4
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