Rashba plasmon polaritons in semiconductor heterostructures
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[as of editgroup_gsiatvwuajcl5pzby6mla42lru]
by
I. V. Iorsh, V. M. Kovalev, M. A. Kaliteevski, I. G. Savenko
2013
Abstract
We propose a concept of surface plasmon-polariton amplification in the
structure comprising interface between dielectric, metal and asymmetric quantum
well. Due to the Rashba spin-orbit interaction, mimina of dispersion relation
for electrons in conduction band are shifted with respect to the maximum of
dispersion dependence for holes in Γ-point. When energy and momentum
intervals between extrema in dispersion relations of electrons and holes match
dispersion relation of plasmons, indirect radiative transition can amplify the
plasmons; excitation of leaky modes is forbidden due to the selection rules.
Efficiency of the indirect radiative transition is calculated and design of the
structure is analysed.
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1301.5181v3
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