Rashba plasmon polaritons in semiconductor heterostructures release_7dbnxrxuwzcm5dmtdx56hif2pa [as of editgroup_gsiatvwuajcl5pzby6mla42lru]

by I. V. Iorsh, V. M. Kovalev, M. A. Kaliteevski, I. G. Savenko

Released as a article .

2013  

Abstract

We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal and asymmetric quantum well. Due to the Rashba spin-orbit interaction, mimina of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.
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Type  article
Stage   accepted
Date   2013-03-14
Version   v3
Language   en ?
arXiv  1301.5181v3
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