Kwang Hong Lee creator_jpepz5w775b2vdgdzxi2odafwe

Given name Kwang Hong
Surname Lee

Releases

This creator has contributed to:

2018 Strain relaxation of germanium-tin (GeSn) fins
published | article-journal
doi:10.1063/1.5012559
2018-03-28 High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator
published | article-journal
doi:10.1364/prj.6.000290
2018-04-10 High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
published | article-journal
doi:10.1364/oe.26.010305
2017-12-18 Thermal stability of germanium-tin (GeSn) fins
published | article-journal
doi:10.1063/1.5006994
2018-04-03 Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion
published | article-journal
doi:10.1364/ome.8.001117
2018 Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications
published | article-journal
doi:10.1109/jphot.2018.2829988
2016 Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
published | article-journal | CC-BY
doi:10.1063/1.4961025
2016-07-11 GeSn-on-insulator substrate formed by direct wafer bonding
published | article-journal
doi:10.1063/1.4958844
2018-06-20 GeSn lateral p-i-n photodetector on insulating substrate
published | article-journal
doi:10.1364/oe.26.017312
2018 Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process
published | article-journal
doi:10.1109/jeds.2017.2787202
2018-01-07 Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer
published | article-journal
doi:10.1063/1.5001796
2019-09-11 Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
published | article-journal
doi:10.1364/oe.27.026924
2018 In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
published | article-journal
doi:10.1063/1.5058717
2018-09-07 Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer
published | article-journal
doi:10.1088/1361-6641/aadc27
2020-05-29 Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density
published | article-journal
doi:10.1063/5.0005112
2019-12-02 Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD
published | article-journal
doi:10.1364/ome.10.000001