Semiconductor Science and Technology
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Showing first 25 out of 10,545 results
Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells
Huai-Yu Cheng, Chao An Jong, Ren-Jei Chung, Tsung-Shune Chin, Rong-Tan Huang
2005
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Semiconductor Science and Technology
doi:10.1088/0268-1242/20/11/002
Spatial distribution of composition and misfit dislocations on the surface of alloys
N V Fomin, D V Shantsev
1996
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Semiconductor Science and Technology
doi:10.1088/0268-1242/11/5/011
Design of intersubband quantum well far-infrared lasers
Zhi-Jun Xin, H N Rutt
1997
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Semiconductor Science and Technology
doi:10.1088/0268-1242/12/9/011
A GaAs-based self-aligned stripe distributed feedback laser
H Lei, B J Stevens, P W Fry, N Babazadeh, G Ternent, D T Childs, K M Groom
2016
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Semiconductor Science and Technology
doi:10.1088/0268-1242/31/8/085001
A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots
E A Laird, C Barthel, E I Rashba, C M Marcus, M P Hanson, A C Gossard
2009
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Semiconductor Science and Technology
doi:10.1088/0268-1242/24/6/064004
Fabrication of nanoscale Bi Hall sensors by lift-off techniques for applications in scanning probe microscopy
H A Mohammed, S J Bending
2014
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Semiconductor Science and Technology
doi:10.1088/0268-1242/29/8/085007
Hexagonal boron nitride for deep ultraviolet photonic devices
H X Jiang, J Y Lin
2014
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Semiconductor Science and Technology
doi:10.1088/0268-1242/29/8/084003
Injectorless quantum cascade laser with two-phonon-resonance design using four alloys for emission wavelengths between 5 and 9 µm
Simeon Katz, Augustinas Vizbaras, Gerhard Boehm, Markus-Christian Amann
2010
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Semiconductor Science and Technology
doi:10.1088/0268-1242/26/1/014018
Exploring the optoelectronic properties of Nitrido-magneso-silicates: Ca[Mg3SiN4], Sr[Mg3SiN4], and Eu[Mg3SiN4]
Sikander Azam, Saleem Ayaz Khan, Souraya Goumri-Said
2017
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Semiconductor Science and Technology
doi:10.1088/1361-6641/aa62bd
Cathodoluminescence of homogeneous cubic GaN/GaAs(001) layers
C Wang, D J As, B Schöttker, D Schikora, K Lischka
1999
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Semiconductor Science and Technology
doi:10.1088/0268-1242/14/2/010
Growth of graphene from SiC{0001} surfaces and its mechanisms
Wataru Norimatsu, Michiko Kusunoki
2014
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Semiconductor Science and Technology
doi:10.1088/0268-1242/29/6/064009
The effect on currents of anticrossings in the energy spectrum in quantum wells under crossed electric and magnetic fields
Chang Sub Kim, Oleg Olendski
1997
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Semiconductor Science and Technology
doi:10.1088/0268-1242/12/7/006
Violation of the rate-window concept in the charge deep-level transient spectroscopy using second-order filtering
I Thurzo, D R T Zahn, A K Dua
2002
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Semiconductor Science and Technology
doi:10.1088/0268-1242/17/5/309
The silicon on dust substrate path to make solar cells directly from a gaseous feedstock
J M Serra, C R Pinto, J A Silva, M C Brito, J Maia Alves, A M Vallêra
2009
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Semiconductor Science and Technology
doi:10.1088/0268-1242/24/4/045002
Characterization of electron transport at high fields in silicon-on-insulator devices: a Monte Carlo study
J B Roldán, F Gámiz, A Roldán, N Rodríguez
2005
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Semiconductor Science and Technology
doi:10.1088/0268-1242/21/1/015
Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching
B S Ryvkin, E A Avrutin, J E K Kostamovaara, J T Kostamovaara
2017
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Semiconductor Science and Technology
doi:10.1088/1361-6641/32/2/025015
Charge pumping and current quantization in surface acoustic-wave-driven carbon nanotube devices
M R Buitelaar, P J Leek, V I Talyanskii, C G Smith, D Anderson, G A C Jones, J Wei, D H Cobden
2006
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Semiconductor Science and Technology
doi:10.1088/0268-1242/21/11/s10
Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption
C W Cheah, G Karunasiri, L S Tan
2002
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Semiconductor Science and Technology
doi:10.1088/0268-1242/17/9/322
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
P Yu Bokov, T Brazzini, M F Romero, F Calle, M Feneberg, R Goldhahn
2015
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Semiconductor Science and Technology
doi:10.1088/0268-1242/30/8/085014
Room-temperature Coulomb-blockade-dominated transport in gold nanocluster structures
L Clarke, M N Wybourne, L O Brown, J E Hutchison, M Yan, S X Cai, J F W Keana
1998
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Semiconductor Science and Technology
doi:10.1088/0268-1242/13/8a/033
Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding
R Singh, I Radu, R Scholz, C Himcinschi, U Gösele, S H Christiansen
2006
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Semiconductor Science and Technology
doi:10.1088/0268-1242/21/9/016
The orientation independence of the CdTe-HgTe valence band offset as determined by X-ray photoelectron spectroscopy
C R Becker, Y S Wu, A Waag, M M Kraus, G Landwehr
1991
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Semiconductor Science and Technology
doi:10.1088/0268-1242/6/12c/014
Oscillatory behaviour in the nonlinear emission of semiconductor microcavities
L Viña, R André, V Ciulin, J D Ganiere, B Deveaud
2004
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Semiconductor Science and Technology
doi:10.1088/0268-1242/19/4/110
Temperature controlled properties of sub-micron thin SnS films
Stephen N Nwankwo, Stephen Campbell, Ramakrishna K T Reddy, Neil S Beattie, Vincent Barrioz, Guillaume Zoppi
2018
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Semiconductor Science and Technology
doi:10.1088/1361-6641/aabc6f
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
Fang-I Lai, Tao-Hung Hsueh, Ya-Hsien Chang, Hao-Chung Kuo, S C Wang, Li-Hong Laih, C P Song, H P Yang
2004
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Semiconductor Science and Technology
doi:10.1088/0268-1242/19/8/l02
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